Schwierz, F., Pezoldt, J. & Granzner, R. Two-dimensional supplies and their prospects in transistor electronics. Nanoscale 7, 8261–8283 (2015).
Van Bommel, A. J., Crombeen, J. E. & Van Tooren, A. LEED and Auger electron observations of the SiC(0001) floor. Surf. Sci. 48, 463–472 (1975).
Norimatsu, W. & Kusunoki, M. Development of graphene from SiC{0001} surfaces and its mechanisms. Semicond. Sci. Technol. 29, 064009 (2014).
Nair, M. et al. Band hole opening induced by the structural periodicity in epitaxial graphene buffer layer. Nano Lett. 17, 2681–2689 (2017).
Turmaud, J.-P. Variable Vary Hopping Conduction within the Epitaxial Graphene Buffer Layer on SiC(0001). Georgia Institute of Expertise, PhD thesis (2018).
Chen, A., Hutchby, J., Zhirnov, V. & Bourianoff, G. (eds) Rising Nanoelectronic Gadgets (Wiley, 2015).
de Heer, W. A., Berger, C. & First, P. N. Patterned skinny movie graphite units and technique for making similar. US patent 7,015,142 B2 (2006).
Berger, C. et al. Ultrathin epitaxial graphite: 2D electron fuel properties and a route towards graphene-based nanoelectronics. J. Phys. Chem. B 108, 19912–19916 (2004).
Nakada, Ok., Fujita, M., Dresselhaus, G. & Dresselhaus, M. S. Edge state in graphene ribbons: nanometer dimension impact and edge form dependence. Phys. Rev. B 54, 17954–17961 (1996).
Das Sarma, S., Adam, S., Hwang, E. H. & Rossi, E. Digital transport in two-dimensional graphene. Rev. Mod. Phys. 83, 407–470 (2011).
Han, M. Y., Özyilmaz, B., Zhang, Y. & Kim, P. Vitality band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98, 206805 (2007).
Stergiou, A., Cantón-Vitoria, R., Psarrou, M. N., Economopoulos, S. P. & Tagmatarchis, N. Functionalized graphene and focused functions – highlighting the highway from chemistry to functions. Prog. Mater Sci. 114, 100683 (2020).
Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 16052 (2016).
Emtsev, Ok. V., Speck, F., Seyller, Th., Ley, L. & Riley, J. D. Interplay, development, and ordering of epitaxial graphene on SiC{0001} surfaces: a comparative photoelectron spectroscopy research. Phys. Rev. B 77, 155303 (2008).
Riedl, C., Coletti, C. & Starke, U. Structural and digital properties of epitaxial graphene on SiC(0 0 0 1): a evaluation of development, characterization, switch doping and hydrogen intercalation. J. Phys. D 43, 374009 (2010).
de Heer, W. A. et al. Giant space and structured epitaxial graphene produced by confinement managed sublimation of silicon carbide. Proc. Natl Acad. Sci. USA 108, 16900–16905 (2011).
de Heer, W. A. Graphene transistor. US patent 9,171,907 B2 (2015).
Nevius, M. S. et al. Semiconducting graphene from extremely ordered substrate interactions. Phys. Rev. Lett. 115, 136802 (2015).
Cheng, L., Zhang, C. & Liu, Y. Why two-dimensional semiconductors typically have low electron mobility. Phys. Rev. Lett. 125, 177701 (2020).
Emery, J. D. et al. Chemically resolved interface construction of epitaxial graphene on SiC(0001). Phys. Rev. Lett. 111, 215501 (2013).
Conrad, M. et al. Construction and evolution of semiconducting buffer graphene grown on SiC(0001). Phys. Rev. B 96, 195304 (2017).
Goler, S. et al. Revealing the atomic construction of the buffer layer between SiC(0001) and epitaxial graphene. Carbon 51, 249–254 (2013).
Tairov, Y. M. & Tsvetkov, V. F. Progress in controlling the expansion of polytypic crystals. Prog. Cryst. Development Charact. 7, 111–162 (1983).
Bao, J., Yasui, O., Norimatsu, W., Matsuda, Ok. & Kusunoki, M. Sequential management of step-bunching throughout graphene development on SiC (0001). Appl. Phys. Lett. 109, 081602 (2016).
Honstein, G., Chatillon, C. & Baillet, F. Thermodynamic method to the vaporization and development phenomena of SiC ceramics. I. SiC and SiC–SiO2 mixtures beneath impartial situations. J. Eur. Ceram. Soc. 32, 1117–1135 (2012).
Müller, G. & Friedrich J. in Encyclopedia of Condensed Matter Physics (eds Bassani, F. et al.) 262–274 (Elsevier, 2005).
Huang, L. et al. Excessive-contrast SEM imaging of supported few-layer graphene for differentiating distinct layers and resolving high quality options: there may be loads of room on the backside. Small 14, 1704190 (2018).
Ferrari, A. C. et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97, 187401 (2006).
Kunc, J., Hu, Y., Palmer, J., Berger, C. & de Heer, W. A. A technique to extract pure Raman spectrum of epitaxial graphene on SiC. Appl. Phys. Lett. 103, 201911 (2013).
Gammelgaard, L. et al. Graphene transport properties upon publicity to PMMA processing and warmth therapies. 2D Mater. 1, 035005 (2014).
Donato, N. & Udrea, F. Static and dynamic results of the unfinished ionization in superjunction units. IEEE Trans. Electron Gadgets 65, 4469–4475 (2018).
Vallejos-Burgos, F., Coudert, F.-X. & Kaneko, Ok. Air separation with graphene mediated by nanowindow-rim concerted movement. Nat. Commun. 9, 1812 (2018).
Li, M. et al. Electronically engineered interface molecular superlattices: STM research of fragrant molecules on graphite. Phys. Rev. B 76, 155438 (2007).
Sul, O. et al. Discount of gap doping of chemical vapor deposition grown graphene by photoresist choice and thermal therapy. Nanotechnology 27, 505205 (2016).
Jariwala, D. et al. Band-like transport in excessive mobility unencapsulated single-layer MoS2 transistors. Appl. Phys. Lett. 102, 173107 (2013).
Li, J.-T. et al. Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide skinny movie transistor. Appl. Phys.Lett. 110, 023504 (2017).
Chen, J. H. et al. Charged-impurity scattering in graphene. Nat. Phys. 4, 377–381 (2008).
Kittel, C. Introduction to Strong State Physics, eighth edn (2004, Wiley).
Schwierz, F. Graphene transistors. Nat. Nanotechnol. 5, 487–496 (2010).
de Heer, W. A. Patterned graphene nanoelectronics. Georgia Tech Library Archive. https://doi.org/10.35090/gatech/69985 (2022).
de Heer, W. A. The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide. Phys. Scr. 2012, 014004 (2012).
Maboudian, R., Carraro, C., Senesky, D. G. & Roper, C. S. Advances in silicon carbide science and expertise on the micro- and nanoscales. J. Vacuum Sci. Technol. A 31, 050805 (2013).
Schlecht, M. T. et al. An environment friendly terahertz rectifier on the graphene/SiC supplies platform. Sci. Rep. 9, 11205 (2019).
Epping, A. et al. Insulating state in low-disorder graphene nanoribbons. Phys, Standing Solidi 256, 1900269 (2019).
Prudkovskiy, V. S. et al. An epitaxial graphene platform for zero-energy edge state nanoelectronics. Nat. Commun. 13, 7814 (2022).
Briggs, N. et al. Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and distinctive 2D supplies. Nanoscale 11, 15440–15447 (2019).
Gigliotti, J. et al. Extremely ordered boron nitride/epigraphene epitaxial movies on silicon carbide by lateral epitaxial deposition. ACS Nano 14, 12962–12971 (2020).
Ottapilakkal, V. et al. Thermal stability of skinny hexagonal boron nitride grown by MOVPE on epigraphene. J. Cryst. Development 603, 127030 (2023).
Speck, F. et al. The quasi-free-standing nature of graphene on H-saturated SiC(0001). Appl. Phys. Lett, 99, 122106 (2011).
Palmer, J. et al. Managed epitaxial graphene development inside detachable amorphous carbon corrals. Appl. Phys. Lett, 105, 023106 (2014).
Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A. A. & Starke, U. Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation. Phys. Rev. Lett. 103, 246804 (2009).